실리콘 카바이드(SiC) 세라믹
Known since the late 19th century as carborundum silicon carbide ceramics (SiC), this compound of silicon and carbon has evolved from abrasive powders into a cornerstone material for high-performance engineering. Today, silicon carbide ceramics are indispensable in industries ranging from semiconductors and electronics to aerospace, automotive, energy, and chemical processing.
What is silicon carbide? In scientific terms, it is a covalently bonded silicon carbide compound with the chemical formula SiC, exhibiting a unique crystalline structure that can exist in different polytypes (3C, 4H, 6H). Its high hardness (Mohs 9.5), low density (~3.1 g/cm³), high melting temperature (~2,700 °C), and excellent silicon carbide thermal conductivity make it ideal for demanding applications where metals or plastics fail.
At Great Ceramic, we provide engineered silicon carbide parts tailored to customer requirements, offering unmatched precision, consistency, and reliability.
Advantages of Silicon Carbide Ceramics
The unique combination of mechanical, thermal, and electrical properties makes SiC stand out among technical ceramics.
Available grades of silicon carbide materials
Great Ceramic provides a range of high-performance silicon carbide materials optimized per application:
Pressureless Sintered Silicon Carbide Ceramics(SSIC)
Pressureless sintered silicon carbide ceramics (SSiC) are high-performance structural ceramics produced through a high-temperature, pressureless sintering process. Their primary component is high-purity silicon carbide powder. No metallic binder or external pressure is required during the sintering process, resulting in extremely high purity and density, resulting in excellent overall performance. This material is widely used in extremely harsh environments due to its exceptional mechanical strength, wear resistance, and corrosion resistance.
주요 기능
일반적인 애플리케이션
생산 프로세스
Pressureless sintered silicon carbide ceramics are made from high-purity SiC powder, which is then formed into a mold with a small amount of sintering aid and pressurelessly sintered at temperatures exceeding 2000°C. This process gives the material a dense structure close to the theoretical density, with fine and uniform grains, thus ensuring excellent comprehensive performance.
Reaction-Sintered Silicon Carbide Ceramics (SISiC)
Reaction-Sintered Silicon Carbide Ceramics (SISiC) is a high-performance ceramic material made from silicon carbide (SiC) powder and a carbon source. Liquid silicon is infiltrated into a green body at high temperature, generating a reaction that produces new silicon carbide. Compared to pressureless-sintered silicon carbide (SSiC), SISiC boasts lower production temperatures and a more flexible process, enabling the fabrication of large-scale and complex-shaped structural components. Consequently, it enjoys widespread industrial application.
주요 기능
일반적인 애플리케이션
생산 프로세스
The preparation process of reaction-sintered silicon carbide typically involves:
The advantages of this method include a simple process, low sintering temperature, and minimal dimensional shrinkage, enabling the production of large, complex components close to net dimensions. However, due to the presence of residual silicon, its high-temperature strength and oxidation resistance are slightly inferior to those of SSiC.
Key Properties of Silicon Carbide
Great Ceramic offers a variety of silicon carbide materials for customers to choose from. The following values are typical material properties and may vary depending on product configuration and manufacturing process. For more details, please feel free to 문의하기.
속성 | 단위 | SSiC | SiSiC | Si3N4 |
---|---|---|---|---|
색상 | -- | 짙은 회색 | 짙은 회색 | 회색 또는 검은색 |
밀도 | g/cm³ | 3.15 | 3.02 | 3.2 |
다공성 | % | ≤0.1 | ≤0.1 | -- |
경도 | GPa | 22 | 22 | 15 |
압축 강도 | MPa | 2600 | 2600 | 2500 |
굴곡 강도 | MPa | 400 | 250 | 700 |
탄성 계수 | GPa | 410 | 330 | 300 |
최대 사용 온도 | ℃ | 1400 | 1000 | 1100 |
열 전도성 | W/(m・K) | 100~120 | 45(1200℃) | 15~20 |
열팽창 계수 | 1 x 10-6/°C | 4 | 4.5 | 3 |
탄화규소 소재의 화학적 특성
산소 반응의 온도가 1300°C에 도달하면 탄화규소 결정 표면에 이산화규소의 보호 층이 형성됩니다. 보호 층이 두꺼워지면 내부 탄화 규소가 저항하고 계속 결합하여 탄화 규소 결정 실리콘 카바이드가 우수한 내 화학성을 갖도록합니다. 내식성 측면에서 SiC 재료는 이산화 규소 보호막의 역할로 인해 내산성이 강하지 만 내 알칼리성이 좋지 않습니다.
Silicon Carbide Ceramics Application Cases
Great Ceramic's silicon carbide (SiC) ceramics combine outstanding hardness, excellent thermal conductivity, superior wear resistance, and exceptional chemical stability, making them one of the most advanced ceramic materials for demanding industrial applications. With a high melting point, low thermal expansion, and ability to withstand extreme environments, silicon carbide ceramics are ideal for industries that require durability, efficiency, and long service life.
Key Applications of Silicon Carbide Ceramics:
Silicon Carbide Ceramic Machining
Silicon carbide (SiC) ceramics are known for their extreme hardness, high thermal conductivity, and excellent wear resistance, making them one of the most challenging technical ceramics to process. At Great Ceramic, we provide comprehensive silicon carbide machining services that deliver industry-leading precision, performance, and reliability.
During machining, we employ advanced diamond grinding, precision lapping, and fine polishing techniques to achieve micron-level tolerances and exceptional surface finishes. These capabilities allow us to meet the stringent structural accuracy and surface quality requirements of mechanical seals, semiconductor substrates, crucibles, heat exchangers, and aerospace components.
With years of technical expertise and state-of-the-art equipment, Great Ceramic not only supplies standardized silicon carbide parts but also develops customized complex components tailored to specific industrial needs, ensuring high reliability and long service life under extreme working conditions.
자주 묻는 질문
Why Choose us for Silicon Carbide Ceramics?
에서 그레이트 세라믹, we are more than just a silicon carbide ceramics supplier — we are a precision engineering partner. Our strengths include: